| 摘要 |
PROBLEM TO BE SOLVED: To prevent a semiconductor hetero-structure from deteriorating in sensitivity or performance characteristics by a method wherein the back surface of a substrate is etched to form a strain pattern inside a train layer arranged in the front surface of a a substrate. SOLUTION: The back side of a multilayered semiconductor structure is etched through such a manner that a selective part of a first layer 38 located on the back surface of a substrate is etched as deep as 15μm or so, and a window which is possessed of surfaces 40 and 42 and as thick as 10μm or so is formed. A material is removed up to a first stop layer 44. Thin strips 46 are provided penetrating through the first stop layer. The selective part is etched as far as a final stop layer 52 adjacent to a final strain layer 54 through the thin strips and a final substrate layer 48, whereby the back surface of the final substrate layer 48 is processed to form a strain pattern in the front surface of the final substrate layer 48. By this setup, a semiconductor hetero- structure can be prevented from deteriorating in sensitivity and performance characteristics.
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