| 摘要 |
PURPOSE: To provide a semiconductor optical modulator with which high-speed modulation is possible and a semiconductor optical modulator integrated with light sources. CONSTITUTION: An i-InP layer 6 is formed on the side faces of a light absorption layer 4 formed on a substrate 1 of n type InP, by which the capacity of an embedment layer 7 of p-InP and p-n junction 13 of the embedment layer are drastically decreased and high-speed modulation is made possible. The process for producing this device includes a stage for growing double hetero layers in which the light absorption layer 4 is held by the n-InP clad layer 3 and the p-InP clad layer 5 by an org. metal vapor growth method in the region held by a stripe mask of two pieces of SiO2 formed on the n type InP substrate, a stage for growing the p-InP clad layer 5 until the layer is formed to a triangular shape, a stage for partially removing the side edges on the inner side facing the stripe mask and a stage for growing the embedment layer 7 consisting of the i-InP layer 6 and the p-InP layer. |
