发明名称 HYBRID INTEGRATED CIRCUIT DEVICE AND MANUFACTUR THEREOF
摘要 PURPOSE: To realize quite effective noise shield effect by feeding a low or high power supply potential to a conductive sealing resin directly touching at least one of the rear side of a semiconductor chip or the other electrode side of a passive chip device. CONSTITUTION: Wiring patterns 12, 14 are connected, respectively, with end face electrodes 15 arranged on the circumferential side face of a resin sealed recess 11. In this regard, a multilayer resin sealing structure comprising a nonconductive sealing resin 18 filling the bottom face side and a conductive sealing resin 19 filling the upper part thereof is employed. The conductive sealing resin 19 is applied with any one of low or high power supply potentials and constructed to touch at,least one of the rear side of a semiconductor chip 16 or the other electrode side of passive chip device 17a-17f directly. With such structure, quite effective noise shield effect is provided by the conductive sealing resin 19.
申请公布号 JPH08236692(A) 申请公布日期 1996.09.13
申请号 JP19950040175 申请日期 1995.02.28
申请人 NEC CORP 发明人 EGAWA HIDENORI
分类号 H05K3/28;H01L25/04;H01L25/18;(IPC1-7):H01L25/04 主分类号 H05K3/28
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