PLATINUM THIN FILM AND SEMICONDUCTOR DEVICE, AND METHOD OF THEIR FABRICATION

摘要

PURPOSE: To provide a semiconductor device having a fine memory preferable for high integration using a ferroelectric substance as a capacitor insulating film. CONSTITUTION: A platinum lower electrode 62 is provided on a TiN film 61 being a diffusion preventing conductor layer, on which a ferroelectric thin film 63 is provided. A ferroelectric capacitor is constructed with the platinum lower electrode 62 and the ferroelectric thin film 63, etc. An element forming a conductive nitride is added to the platinum lower electrode and part or the whole of the element is nitrided. For this, the TiN film 61 is prevented from being oxidized upon formation of the ferroelectric thin film 63.