发明名称 |
SEMICONDUCTOR INTEGRATED CIRCUIT ELEMENT AND SEMICONDUCTOR DEVICE |
摘要 |
PURPOSE: To improve an integration degree by forming a circuit element consisting of a protective elementand an I/O buffer downward a pad of a semiconductor integrated circuit element having a pad for wire bonding in the periphery. CONSTITUTION: A rectangular part of the outermost periphery is a pad 2 (AL3) and a rectangular part of its inside is a wiring 16 (AL2). A region of a full line is a connection part of the pad 2 and the wiring 16 that is a contact part TC2. A protective element 4 is formed on a left half of TC2 and an I/O buffer circuit 5 is formed on a right half. A P-channel MOS 6 is formed on an upper side half of TC2 and an N-channel MOS 8 is formed on a lowerside half. Further, hatching part is a gate 20. A connection part of the protective part 4 and the I/O buffer circuit 5 and a connection part 22 of an inside cell and the I/O buffer circuit 5 are also formed of AL 1. The protective element 4 and the I/O buffer circuit 5 are formed under the pad 2 so as thereby to be small- sized. |
申请公布号 |
JPH08236706(A) |
申请公布日期 |
1996.09.13 |
申请号 |
JP19950041774 |
申请日期 |
1995.03.01 |
申请人 |
HITACHI LTD;AKITA DENSHI KK |
发明人 |
TOMATSU TAKASHI |
分类号 |
H01L27/04;H01L21/60;H01L21/822;H01L27/06 |
主分类号 |
H01L27/04 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|