发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT ELEMENT AND SEMICONDUCTOR DEVICE
摘要 PURPOSE: To improve an integration degree by forming a circuit element consisting of a protective elementand an I/O buffer downward a pad of a semiconductor integrated circuit element having a pad for wire bonding in the periphery. CONSTITUTION: A rectangular part of the outermost periphery is a pad 2 (AL3) and a rectangular part of its inside is a wiring 16 (AL2). A region of a full line is a connection part of the pad 2 and the wiring 16 that is a contact part TC2. A protective element 4 is formed on a left half of TC2 and an I/O buffer circuit 5 is formed on a right half. A P-channel MOS 6 is formed on an upper side half of TC2 and an N-channel MOS 8 is formed on a lowerside half. Further, hatching part is a gate 20. A connection part of the protective part 4 and the I/O buffer circuit 5 and a connection part 22 of an inside cell and the I/O buffer circuit 5 are also formed of AL 1. The protective element 4 and the I/O buffer circuit 5 are formed under the pad 2 so as thereby to be small- sized.
申请公布号 JPH08236706(A) 申请公布日期 1996.09.13
申请号 JP19950041774 申请日期 1995.03.01
申请人 HITACHI LTD;AKITA DENSHI KK 发明人 TOMATSU TAKASHI
分类号 H01L27/04;H01L21/60;H01L21/822;H01L27/06 主分类号 H01L27/04
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