发明名称 |
Eeprom for writing and erasing data using tunnel current. |
摘要 |
A non-volatile semiconductor memory device includes a semiconductor substrate, a memory cell including source and drain regions formed in a surface region of the semiconductor substrate, and a first gate insulating film, a charge storage layer, a second gate insulating film, and a control gate sequentially stacked on the semiconductor substrate, the memory cell being capable of electrically rewriting data by exchanging charges between the charge storage layer and the semiconductor substrate, and a means for applying a high potential to the semiconductor substrate and an intermediate potential to the control gate in a first data erase operation, and applying a high potential to the semiconductor substrate and a low potential to the control gate in second and subsequent data erase operations, thereby removing electrons from the charge storage layer.
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申请公布号 |
US5555204(A) |
申请公布日期 |
1996.09.10 |
申请号 |
US19940266633 |
申请日期 |
1994.06.28 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
ENDOH, TETSUO;TANAKA, YOSHIYUKI;ARITOME, SEIICHI;SHIROTA, RIICHIRO;SHUTO, SUSUMU;TANAKA, TOMOHARU;HEMINK, GERTJAN;TANZAWA, TORU |
分类号 |
G11C11/56;G11C16/08;G11C16/12;G11C16/34;(IPC1-7):G11C16/02 |
主分类号 |
G11C11/56 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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