| 摘要 |
An EEPROM cell is made by forming a first dielectric layer on a substrate, forming a tunnel mask with an tunnel opening used for etching the dielectric layer to form a tunnel window, doping a region of the substrate through the tunnel window and stripping the tunnel mask. A spacer frame is made about the perithery of the window over the first doped region of the substrate. A second dielectric layer is formed over the first doped region within the spacer frame which is then removed. Tunnel oxide is deposited on the exposed surface of the first doped region, a floating gate layer is deposited, mask and etched. The mask is stripped Ions are implanted into buried N+ source/drain regions through exposed surfaces of the gate oxide near the floating gate. A blanket interconductor layer covers the device. A control gate layer is deposited, mask and etched. The control gate mask is then removed.
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