| 摘要 |
A particle-detector is formed on a die of semiconductor material (20) comprising: first and second layers (22, 23) with a first type of conductivity (N), a third layer (21) with a second type of conductivity (P), interposed between the first and second layers (22, 23), first and second means (25, 31; 26, 32) for electrical connection with the first and second layers (22, 23), respectively, disposed on the opposite surfaces thereof to those of the junctions with the third layer (21) and third means (27, 24) for electrical connection with the third layer (21). To permit large-scale industrial manufacture, the third means (27, 24) for electrical connection with the third layer (21) comprise a region (24) with the second type of conductivity (P) which extends from the front face of the die as far as the third layer (21) and means (27) for surface electrical contact with this region. <IMAGE> |
