| 摘要 |
<p>PURPOSE: To make it possible to activate impurity ions, which are implanted using an ion implantation device, at a low temperature and to make it possible to prevent the ions from being implanted in the channel part of a thin film transistor without making thick the gate electrode of the thin film transistor by a method wherein an impurity ion implantation in a polycrystaline silicon film is made on a specified condition and the like. CONSTITUTION: A polycrystalline silicon film 7 is formed on an insulating substrate 5 and an insulating film 8 is formed on the film 7. Then, ions 14, which are produced from Kr-base gas containing less than 20% impurity, are implanted in the film 7 via the film 8 while the substrate 5 is heated at 200 deg.C or higher. After that, the substrate 5 is heated to 200 deg.C or higher to activate the impurity gas. For example, all ions 14, which are produced from Kr-base gas containing 0.01-5%pH3 gas, are implanted in source and drain regions 10 at an energy of 80kV using an ion implantation device which does not use a mass spectrometry.</p> |
