| 摘要 |
<p>PURPOSE: To provide a plasma treatment method and device therefor, by which the plasma treatment can uniformly be executed to a base substance having comparatively large area even in the low power range of high frequency power. CONSTITUTION: To the base substance 1112 to be treated used to an electrode, too, DC voltage at 30 to 300V or -30 to -300V and/or AC voltage having <=2MHz frequency in the range of 30 to 600V are impressed. By this method, the uniformities of plasma and film thickness distribution without affecting to the discharging frequency of the impressing power of a high frequency electric source can be obtd. by using the plasma treatment device using the high frequency electric source 1120 having 20 to 450MHz discharge frequency in a reaction vessel 1111 enabling reducing of the pressure. Further, the permissible ranges of the treating condition of the film formation, etc., and design of the producing apparatus are widened.</p> |
