| 摘要 |
<p>PURPOSE: To provide a semiconductor device of a structure, wherein an irregularity in characteristics between elements is little, and a manufacturing method of capable of obtaining such the semiconductor device at a high yield. CONSTITUTION: A semiconductor device is provided with a substrate consisting of an insulative material, a gate electrode 103 formed on the substrate, a thin film, which is formed on the electrode 103 via gate insulating films 111 and 113 and consists of a silicide semiconductor, protective films 133 and 137, which are formed on the thin film and respectively have the two main surfaces opposing to each other, and source and drain electrodes 155 and 153 formed in such a way as to connect electrically with the thin film. The first main surfaces of the respective two main surfaces of the films 133 and 137 come into contact with the thin film and the regions, which are located in the vicinities of the second main surfaces of the films 133 and 137, of the electrodes 155 and 153 contain oxygen.</p> |
