SEMICONDUCTOR DEVICE ISOLATION METHOD

摘要

The method of isolating semiconductor device comprises the steps of : forming a buffer layer(24) on a semiconductor substrate(20); forming an oxidation-preventive pattern(26) having an open to reveal some of the buffer layer(24) and defining an isolation region on the buffer region(24); forming an undercutting region(27) by etching the revealed buffer layer(24) isotropically; forming an oxidation-preventive spacer(28) burying the undercutting region(27); forming a field oxide film(30) by oxidizing the exposed buffer layer(24) and the surface of the substrate.