| 摘要 |
PURPOSE: To eliminate the necessity for taking a processing margin into account in a plate electrode and to contrive increase in the capacity of a semiconductor storage device and the improvement of the soft error resistance of the device. CONSTITUTION: A polycrystalline Si film 34 for forming a plate electrode is formed on the whole surface of a polycrystalline Si film 32, a recessed part 35 due to the polycrystalline Si film 32, which is a storage node electrode, is formed on the film 34 and the part, which is under the bottom part of the recessed part 35, of this film 34 is selectively removed. Thereby, the film 32 can be covered with the film 34 in a self-alignment manner and there is no need to take a margin for an irregularity in dimensions or misalignment into account in the film 34. |
