| 摘要 |
PURPOSE: To lower the connection resistance to a connecting electrode even in optically optimum film thickness for lessening the series resistance compound by a method wherein the thickness of the upper layer part of the upper substrate part of a transparent electrode layer connected to the connecting electrode layer on the substrate back passing a through hole of the substrate is thinned leaving the creeping part in the substrate. CONSTITUTION: A transparent electrode layer 15 made of ITO is firstly formed by mask forming step on an α-Si layer 14 of a substrate 4. Next, the ITO on the topmost surface of the Si layer film 14 is removed for thinning the thickness of the ITO film 15. Next, after plasma etching until the ITO electrode layer 15 in optically optimum film thickness of about 50-100nm is left on the surface, the ITO electrode layer 15 is laminated on the back electrode layer 12 back passing the second through hole 22 to form an additional metallic back electrode layer 19 for creeping in the through hole 22 to be laminated on the ITO electrode layer 15. Through these procedures, the ITO electrode layer 15 on the α-Si layer 14 is thinned by plasma etching step but the inside of the through hole 22 not etched away is left intact so that the ITO electrode layer 15 may be made in electrically and optically optimum film thickness. |
