发明名称 DEEP PATTERN MICRO-LITHOGRAPHY
摘要 A process of lithographically forming microstructures comprises irradiating a workpiece having a radiation sensitive resist with radiation and either simultaneously or sequentially developing the exposed resist whereby new resist revealed by the development of exposed resist is also exposed and developed. In this way deep structures having dimensions between tens of microns and millimetres may be formed without the need for hard x-rays as the incident radiation. Where hard x-rays are employed as the incident radiation the process enables the formation of deep structures much more quickly than using conventional processes.
申请公布号 WO9626467(A1) 申请公布日期 1996.08.29
申请号 WO1996GB00421 申请日期 1996.02.23
申请人 COUNCIL FOR THE CENTRAL LABORATORIES OF THE RESEAR;TURCU, ION, CHRISTIAN, EDMOND;MANN, CHRISTOPHER, MARK;MADDISON, BRIAN, JAMES 发明人 TURCU, ION, CHRISTIAN, EDMOND;MANN, CHRISTOPHER, MARK;MADDISON, BRIAN, JAMES
分类号 G03F7/20;G03F7/30 主分类号 G03F7/20
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