发明名称 |
METHOD AND EQUIPMENT FOR GROWING THIN FILMS METHOD AND EQUIPMENT FOR GROWING THIN FILMS |
摘要 |
PCT No. PCT/FI95/00659 Sec. 371 Date Oct. 2, 1996 Sec. 102(e) Date Oct. 2, 1996 PCT Filed Nov. 28, 1995 PCT Pub. No. WO96/17969 PCT Pub. Date Jun. 13, 1996The invention relates to equipment for growing a thin film onto a substrate. The equipment suited to implement the invention comprises a reaction space having a reaction chamber therein into which a substrate is placed and is subjected to alternately repeated surface reactions of at least two vapor-phase reactants for the purpose of forming a thin film. The equipment further comprises recesses/openings communicating with the reaction space to form gas inflow and outflow channels. The reactants are fed in the form of vapor-phase pulses repeatedly and alternately into the reaction space through the inflow channels, each reactant separately from its own source. The vapor-phase reactants are brought to react with the surface of the substrate for the purpose of forming a solid-state thin film compound on said substrate. The gaseous reaction products and possible excess reactants are removed in gas phase from the reaction space via the outflow channels. |
申请公布号 |
WO9617969(A3) |
申请公布日期 |
1996.08.29 |
申请号 |
WO1995FI00659 |
申请日期 |
1995.11.28 |
申请人 |
MIKROKEMIA OY;SUNTOLA, TUOMO;LINDFORS, SVEN;SOININEN, PEKKA |
发明人 |
SUNTOLA, TUOMO;LINDFORS, SVEN;SOININEN, PEKKA |
分类号 |
C30B25/02;C23C8/06;C23C10/06;C23C16/44;C23C16/455;C23C16/458;C23C16/52;C30B25/14;C30B35/00 |
主分类号 |
C30B25/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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