OPTO-ELECTRO TRANSFER STRUCTURE OF CONTACT IMAGE SENSOR AND THE MANUFACTURING METHOD THEREOF

摘要

The structure comprises a lower electrode(2) on a substrate, a a-Si:H photoelectric conversion layer(3) for transforming light quantity to electric signal, a chrome silicide layer(8) for using indium tin oxide(ITO)(4) on a a-Si:H photoelectric conversion layer(3), a common bias applied line(6) for applying bias. The manufacturing method includes the step of removing needless chrome silicide(8) and a-Si:H photoelectric conversion layer(3).