PATTERNING METHOD USING PHASE SHIFT MASK

摘要

The method of forming pattern using half-phase shift mask comprises the steps of : exposing with a half-phase shift mask(30) after forming a photoresist film(9) on the semiconductor substrate(10); flattening the part(8) exposed by the unnecessary energy of the photoresist film(9) by etching; and forming a pattern through a by developing process.