摘要 |
A plasma processing apparatus, having a dielectric window (4) through which a microwave is introduced into a plasma generation chamber, comprises an electrode (4a) in contact with the dielectric window and capable of transmitting an electromagnetic wave substantially uniformly throughout its entire region, the electrode being substantially grounded. The apparatus may further include means for applying a radio frequency voltage to the electrode, and means for clamping the electrode and capable of transmitting the electromagnetic wave and a radio frequency electric field. Alternatively, the apparatus includes means in contact with the dielectric window and capable of transmitting substantially uniformly the electromagnetic wave throughout its entire region; and means for raising the temperature of the former means. In the arrangement described above, the dielectric window can be cleaned quickly, and the throughput of the apparatus is improved.
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申请人 |
HITACHI, LTD.;TETSUKA, TSUTOMU;YOSHIOKA, KEN;OOTSUKA, MICHIO;SONOBE, TADASHI;FUKUDA, TAKUYA |
发明人 |
TETSUKA, TSUTOMU;YOSHIOKA, KEN;OOTSUKA, MICHIO;SONOBE, TADASHI;FUKUDA, TAKUYA |