Post hot working process for semiconductors

摘要

A post-hot metal deposition process applied to semiconductor wafer manufacturing in order to increase the size of grain structures and improve electromigration resistance in semiconductor devices. A highly ductile metal is first deposited onto a semiconductor substrate having contact points in a partial vacuum. A forge is applied to the substrate-with the highly ductile metal deposited thereon, to form a smooth conductive surface on the substrate, even at the contact points. The forging is done at an appropriate pressure and temperature to perform hot-working of the metal onto the contact points of the substrate. The forge may be used to emboss a conductor image of the highly ductile metal deposited on the substrate. The forging process may be performed by either stamping a surface onto the substrate or by rolling a surface onto the substrate.