| 摘要 |
A gas jet film deposition system includes a source of thermionically emitted electrons (70) which are accelerated through carrier gas (58) and generate He ions by impact ionization. The resultant electron avalanching and multiplication generates an extremely dense plasma, and produces large electron currents. The electron current is collected at a free, high electric field end of a crucible (72). The present system can generate vaporized evaporant which is entrained in the gas jet and thereby provide a high density source of ions. The ions may be presented to a substrate together with or without the evaporant. |
