| 摘要 |
A semiconductor memory device precharges a row chain. A synchronous dynamic random access semiconductor memory device automatically precharges a row chain reliably and effectively. After finishing an address operation about one memory bank among the memory banks, the semiconductor memory device includes a precharge signal generator for generating a signal automatically precharging one memory bank by corresponding to a signal having a row address strobe signal buffer, a burst length, and a latency information. The precharge signal generator is positioned between a column address generation circuit and a row address strobe signal buffer, and precharges a corresponding bit line in the memory back without an external precharge command.
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