| 摘要 |
A mask pattern and a forming method of a micro pattern by the mask pattern capable of solving a bad pattern due to a difference of a thickness of a resist in a stepped portion are disclosed. In the mask pattern, a blind pattern(1') is formed between a mask pattern (1) arranged at an area in which a resist film(2) is relatively thin due to a stepped portion formed on a substrate(3) to be processed. The blind pattern(1') has a size which a sensitive film pattern is not formed by being exposed to a light.
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