| 摘要 |
A layered structure for a semiconductor substrate has a planar surface, lighter weight, and increased flexural rigidity. By decreasing warping in a multilayered recording medium that arises when forming the recording layer, while suppressing an increase in the weight of the memory substrate, a recording medium for a compact, large capacity memory device can be manufactured. The recording medium (1) is positioned opposite a read/write circuit substrate (6) that is provided with a plurality of miniature probes (62). A recording layer (13) is formed on a front surface of a memory substrate (11), a beam structure (14) for reinforcing flexural rigidity is formed on a back surface of said memory substrate. A conductive layer may be formed between the memory substrate and the recording layer.
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