发明名称 |
Plug strap process utilizing selective nitride and oxide etches |
摘要 |
The invention provides a method for electrically connecting a trench capacitor and a diffusion region, and also for electrically connecting a trench capacitor or a diffusion region with external circuitry in a semiconductor device. The method provides for formation of a strap or bridge contact by formation of strap holes exposing the electrical elements utilizing an oxide insulation layer and a nitride etch stop and a highly selective oxide:nitride etch and a selective nitride:oxide etch. The strap holes may then be filled with an electrical conductor.
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申请公布号 |
US5545581(A) |
申请公布日期 |
1996.08.13 |
申请号 |
US19940350445 |
申请日期 |
1994.12.06 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ARMACOST, MICHAEL D.;GIVENS, JOHN H.;KOBURGER, III, CHARLES W.;LASKY, JEROME B. |
分类号 |
H01L21/302;H01L21/3065;H01L21/768;H01L21/8242;(IPC1-7):H01L21/824 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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