| 摘要 |
PURPOSE: To attain vapor growth of nitrogen-contg. III-V compds. each having a low ratio of V to III, especially InGaN and InGaAlN. CONSTITUTION: When a III-V compd. mixed crystal contg. nitrogen as a group V element is grown by a vapor growth method using an organo-metallic compd. as a group III element source, an amido compd. of a group III element represented by the general formula M(NR2 )3 is used. In the formula, M is at least one kind of group III element selected from among In, Al and Ga and R is at least one kind of functional group selected from among 1-10C alkyl, aryl, aralkyl, trimethylsilyl and triethylsilyl. |
