| 摘要 |
PURPOSE: To make it possible to form reliably a T-type gate electrode having not a deformation due to a recess or a projection by a method wherein after an electrode leg part is formed, a second resist pattern is formed on the leg part in such a way that the point of the leg part is exposed in the direction of the bottom of a second aperture, an electrode head is formed and the like. CONSTITUTION: A first resist pattern 3 having a comparatively narrow first aperture 2 is formed on a semiconductor substrate 1 and an electrode metal film is deposited from over the aperture 2 to form an electrode leg part 61 in the aperture 2. Then, a second resist pattern 5 is formed on the leg part 61 in such a way that the pattern 5 has a comparatively wide second aperture 4 and the point of the leg part 61 is exposed in the direction of the bottom of the aperture 4 and an electrode metal film is deposited from over the aperture 4 to form an electrode head 62 in the aperture 4. Then, a projection 11 generated on the head 62 is removed by etching. For example, a resist film 10 is formed on the leg part 61 and the film 10 is etched until the point of the leg part 61 is exposed. |
