INTERNAL VOLTAGE GENERATION CIRCUIT, SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MEASURING CONSUMED CURRENT,申请号JP19950008426-传众专利搜索

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发明名称	INTERNAL VOLTAGE GENERATION CIRCUIT, SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MEASURING CONSUMED CURRENT
摘要
申请公布号	JPH08203269(A)	申请公布日期	1996.08.09
申请号	JP19950008426	申请日期	1995.01.23
申请人	MITSUBISHI ELECTRIC CORP	发明人	HIRAYAMA KAZUTOSHI
分类号	G11C11/407;G05F3/24;G11C5/14;G11C11/401;G11C29/02;G11C29/46;G11C29/50;(IPC1-7):G11C11/407	主分类号	G11C11/407
代理机构		代理人
主权项
地址

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