| 摘要 |
PURPOSE: To obtain a good emission diode array, and fabrication method therefor, having pn junction defined by a high concentration Zn diffusion region of shallow diffusion depth by setting a high surface concentration of Zn in the diffusion region thereby restricting the contact resistance to a low value between an electrode and the Zn diffusion region. CONSTITUTION: The emission diode array comprises an n-type compound semiconductor substrate selectively diffused with Zn through solid phase diffusion, a region having low surface concentration of Zn formed at a part of a Zn diffusion region 13, a region having high surface concentration of Zn formed around the region having low surface concentration of Zn, and a p-side electrode 14 coming into contact with the region having low surface concentration of Zn. |
