| 摘要 |
<p>A semiconductor processing apparatus and process is disclosed which is capable of degassing a semiconductor substrate (30) and also orienting the substrate (30) in the same vacuum chamber (2). The apparatus includes an electrostatic clamping structure (10,12,20) for retaining the entire undersurface of a semiconductor substrate (30) in thermal communication therewith in the vacuum chamber (2), a heater (14) located within the electrostatic clamping structure (10,12,20) for heating the electrostatically clamped substrate (30) to degas it, a rotation mechanism (40,42,44) for imparting rotation to the substrate in the vacuum chamber (2), and a detector (80) for detecting the rotational alignment of the substrate (30) in response to the rotation of the substrate (30). In a preferred embodiment, the substrate (30) is rotated to rotationally align it as it is being heated to degas it. <IMAGE></p> |
