发明名称 |
Thin film multi-layer oxygen diffusion barrier consisting of aluminum on refractory metal |
摘要 |
<p>The use of a bi-layer thin film structure consisting of aluminum or aluminide on a refractory metal layer as a diffusion barrier to oxygen penetration at high temperatures for preventing the electrical and mechanical degradation of the refractory metal for use in applications such as a capacitor electrode for high dielectric constant materials. <IMAGE></p> |
申请公布号 |
EP0725428(A2) |
申请公布日期 |
1996.08.07 |
申请号 |
EP19950120466 |
申请日期 |
1995.12.22 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CABRAL, CYRIL, JR.;COLGAN, EVAN GEORGE;GRILL, ALFRED |
分类号 |
H01L27/04;H01L21/02;H01L21/027;H01L21/28;H01L21/3205;H01L21/768;H01L21/822;H01L21/8242;H01L23/52;H01L23/532;H01L27/108;(IPC1-7):H01L21/285;H01L21/320;H01L23/485 |
主分类号 |
H01L27/04 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|