| 发明名称 |
Silicon carbide metal diffusion barrier layer |
| 摘要 |
<p>Disclosed is the use of silicon carbide as a barrier layer to prevent the diffusion of metal atoms between adjacent conductors separated by a dielectric material. This advancement allows for the use of low resistivity metals and low dielectric constant dielectric layers in integrated circuits and wiring boards. <IMAGE></p> |
| 申请公布号 |
EP0725440(A2) |
申请公布日期 |
1996.08.07 |
| 申请号 |
EP19960300522 |
申请日期 |
1996.01.25 |
| 申请人 |
DOW CORNING CORPORATION |
发明人 |
LOBODA, MARK JON;MICHAEL, KEITH WINTON |
| 分类号 |
H01L21/3205;H01L21/768;H01L23/52;H01L23/522;H01L23/532;H05K1/09;(IPC1-7):H01L23/532 |
主分类号 |
H01L21/3205 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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