| 摘要 |
PURPOSE:To simplify stages and to allow fine processing so that film thicknesses are reduced and fine conductive layers can be formed by bringing a silicon compd. into vapor phase reaction with the radicals generated in exposed parts by selective exposing of a photosensitive org. resin, then by treating the compd. by oxygen plasma. CONSTITUTION:An interlayer insulating film 4 is formed by coating the photosensitive polyimide resin and is selectively exposed by using UV rays 5 except the regions to be apertured. The radicals 6 are generated in the exposed parts. The silicon compd. 7 is brought into vapor phase reaction with the radicals 6 to incorporate the silicon therein. Etching by the oxygen plasma is thereafter executed. The radical parts subjected to the vapor phase reaction with the silicon compd. are changed to a silicon oxide film 8 by the oxygen plasma and this film serves as an etching mask to the oxygen plasma. Only the unexposed parts are thus etched away. The stages are simplified in this way and since the interlayer insulating film is directly etched, the fine processing is possible. The formation of the thin films is possible in case of using said film as the etching mask for the conductive layers. The fine conductive layers are thus formed. |
