发明名称 |
Semiconductor memory device |
摘要 |
A semiconductor memory device includes a flip-flop circuit, a switch provided between the flip-flop circuit and a pair of data lines, a write circuit writing data into the flip-flop circuit via the switch, and a circuit applying a predetermined voltage to the pair of data lines when the write circuit performs a write operation so that a voltage amplitude on the pair of data lines is limited so as to be less than a voltage amplitude of the flip-flop circuit in the write operation.
|
申请公布号 |
US5544109(A) |
申请公布日期 |
1996.08.06 |
申请号 |
US19940205361 |
申请日期 |
1994.03.03 |
申请人 |
FUJITSU LIMITED |
发明人 |
UCHIDA, TOSHIYA;TAGUCHI, MASAO |
分类号 |
G11C11/417;G11C7/10;G11C11/407;G11C11/409;(IPC1-7):G11C7/00 |
主分类号 |
G11C11/417 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|