发明名称 Semiconductor memory device
摘要 A semiconductor memory device includes a flip-flop circuit, a switch provided between the flip-flop circuit and a pair of data lines, a write circuit writing data into the flip-flop circuit via the switch, and a circuit applying a predetermined voltage to the pair of data lines when the write circuit performs a write operation so that a voltage amplitude on the pair of data lines is limited so as to be less than a voltage amplitude of the flip-flop circuit in the write operation.
申请公布号 US5544109(A) 申请公布日期 1996.08.06
申请号 US19940205361 申请日期 1994.03.03
申请人 FUJITSU LIMITED 发明人 UCHIDA, TOSHIYA;TAGUCHI, MASAO
分类号 G11C11/417;G11C7/10;G11C11/407;G11C11/409;(IPC1-7):G11C7/00 主分类号 G11C11/417
代理机构 代理人
主权项
地址