Method of fabricating a dynamic random access memory stacked capacitor

摘要

A DRAM capacitor and a method for fabricating the same, capable of achieving an increase in surface area and thereby an increase in capacitance while reducing the topology, by simply forming a conduction layer, as a charge storage electrode, comprised of conduction spacers around a double-layer pin-shaped conduction layer pattern or a combination of a central conduction layer pattern and an outer conduction layer pattern having an upwardly-opened dome structure surrounding the central conduction layer pattern, using an etch rate difference between insulating films.