FET-based sensors for detection of biologically active substances

摘要

Sensors based on FET in which the gate dielectric is a layer of amorphous hydrogen-contg. carbon (a-C:H) with a boundary surface phase density of <= 5 x 10<11> cm<-2>/*eV<-1> and having gps. sensitive to biochemically active substances bound to the a-C:H layer.