| 发明名称 |
High-Q spiral inductor structure and methods of manufacturing the structure |
| 摘要 |
A high-Q spiral inductor structure that utilizes a three-layer substrate, and methods of manufacturing the structure, are provided. The three-layer substrate is utilizable for CMOS circuits while at the same time minimizing eddy current induction and increasing the inductor quality factor Q of the structure.
|
| 申请公布号 |
US6342424(B1) |
申请公布日期 |
2002.01.29 |
| 申请号 |
US20010828546 |
申请日期 |
2001.04.06 |
| 申请人 |
NATIONAL SEMICONDUCTOR CORP. |
发明人 |
PICHLER CHRISTOPH |
| 分类号 |
H01F17/00;H01F41/04;H01L21/02;H01L27/08;(IPC1-7):H01L21/20 |
主分类号 |
H01F17/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
