SEMICONDUCTOR LIGHT RECEIVING ELEMENT TRANSMITTING INCIDENT LIGHT REPEATEDLY IN LIGHT ABSORBING LAYER AND METHOD FOR FABRICATING THE SAME

摘要

A semiconductor light receiving element comprising a substrate, a lower clad layer formed of at least one layer on the substrate, a light absorbing layer formed on the lower clad layer, an upper clad layer formed of at least one layer on the light absorbing layer, and a light incident end face provided in at least one of the substrate and the lower clad layer such that light entering at a specified angle is absorbed by the light absorbing layer and can be taken out as a current. Equivalent refractive index of at least one of the substrate and the lower clad layer providing the light incident end face is higher than the refractive index of at least one layer constituting the upper clad layer, and the specified angle is set such that light incident to the light absorbing layer ca be reflected on the lower surface of at least one layer constituting the upper clad layer.