| 发明名称 |
METHOD OF MANUFACTURING A THIN FILM TRANSISTOR STATIC RAM CELL |
| 摘要 |
The method is provided to increase the forward and reverse current of parasitic pn diode, and comprises the steps of: injecting the opposite type ion into a contact material so that the area of the ion injection part (16) is equal to the area of a contact; annealing the above contact region.
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| 申请公布号 |
KR960010068(B1) |
申请公布日期 |
1996.07.25 |
| 申请号 |
KR19920016042 |
申请日期 |
1992.09.03 |
| 申请人 |
HYUNDAI ELECTRONICS IND. CO., LTD. |
发明人 |
SONN, KWANG - SIK |
| 分类号 |
H01L21/8244;H01L27/11;H01L29/78;H01L29/786;(IPC1-7):H01L27/11 |
主分类号 |
H01L21/8244 |
| 代理机构 |
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代理人 |
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| 地址 |
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