发明名称 |
Method of fabricating optoelectronic integrated circuit chip |
摘要 |
Provided is a method of fabricating an optoelectronic integrated circuit chip. In particular, a method of fabricating an optoelectronic integrated circuit chip is provided, in which an optical absorption layer of a wave-guide type optical detector is grown to be thicker than a collector layer of a hetero-junction bipolar transistor by using a selective area growth by metal organic chemical vapor deposition (MOCVD) method, and the wave-guide type optical detector and the hetero-junction bipolar transistor are integrated as a single chip on a semi-insulated InP substrate, thereby readily realizing the wave-guide type optical detector improved in quantum efficiency and having the ultra-high speed characteristics.
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申请公布号 |
US2005170549(A1) |
申请公布日期 |
2005.08.04 |
申请号 |
US20040012699 |
申请日期 |
2004.12.16 |
申请人 |
NAM EUN SOO;KIM HO YOUNG;OH MYOUNG SOOK;JUNG DONG YUN;HONG SEON E.;CHO KYOUNG IK |
发明人 |
NAM EUN SOO;KIM HO YOUNG;OH MYOUNG SOOK;JUNG DONG YUN;HONG SEON E.;CHO KYOUNG IK |
分类号 |
H01L21/331;H01L31/109;H01L31/11;(IPC1-7):H01L21/00;H01L29/732;H01L31/032;H01L31/033;H01L31/072 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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