Semiconductor device with Schattky electrode

摘要

A semiconductor device such as a GaAs MESFET or a Schottky barrier diode has a Schottky electrode having a breakdown voltage of improved uniformity and reliability. The Schottky barrier diode has forward and reverse current-voltage characteristics of improved uniformity and reliability. In the GaAs MESFET, an n<+> active layer is formed on a substrate of a compound semiconductor. A source electrode and a drain electrode are formed on the n<+> active layer. A high-resistivity layer is formed between the source and drain electrodes within the n<+> active layer by plasma processing. The high-resistivity layer has a surface state of 0.6-0.8 eV. A Schottky electrode forming a Schottky junction with the active layer is formed on the high-resistivity layer.