| 摘要 |
In a method of producing an ohmic contact (5) to a p-type alpha -SiC layer (3b) in a semiconductor device (1), layers of aluminium, titanium and silicon are deposited on said alpha -SiC layer (3b), and said deposited layers (5) are annealed to convert at least part of said deposited layers (5) to aluminium-titanium-silicide. |
