发明名称 Semiconductor module for power semiconductor
摘要 The module includes power semiconductor components (101,102) which are wired by a metal film (103) deposited on a substrate (106). These components form asymmetric unit arrangements contg. semiconductor components. Each unit is located on the substrate in the same direction. One unit is coupled to electrode terminals (108,110), which are coupled to coupling terminals. The electrode terminals are fitted in given spacing intervals. Pref. the asymmetric unit arrangement is of left-right and/or top-bottom asymmetric direction type.
申请公布号 DE19601372(A1) 申请公布日期 1996.07.18
申请号 DE1996101372 申请日期 1996.01.16
申请人 HITACHI, LTD., TOKIO/TOKYO, JP;HITACHI CAR ENGINEERING CO.,LTD., HITACHINAKA, IBARAKI, JP 发明人 INOUE, HIROKAZU, IBARAKI, JP;SAITO, RYUICHI, HITACHI, IBARAKI, JP;MORI, MUTSUHIRO, MITO, IBARAKI, JP;KURIHARA, YASUTOSHI, HITACHINAKA, IBARAKI, JP;ONUKI, JIN, HITACHI, IBARAKI, JP;KIMURA, SHIN, HITACHI, IBARAKI, JP;SHIMADA, SATOSHI, HITACHI, IBARAKI, JP;SUZUKI, KAZUHIRO, MITO, IBARAKI, JP;KAMITA, YUKIO, HITACHI, IBARAKI, JP;KOBAYASHI, ISAO, IBARAKI, JP;YAMADA, KAZUJI, HITACHI, IBARAKI, JP;MOMMA, NAOHIRO, HITACHI, IBARAKI, JP
分类号 H01L23/28;H01L23/34;H01L23/538;H01L25/07;H01L25/18 主分类号 H01L23/28
代理机构 代理人
主权项
地址