Method for interconnecting semiconductor devices

摘要

A method for forming an interconnect structure within a semiconductor device. An isolation region which defines an active region is formed upon a semiconductor substrate. A gate electrode is formed upon the active region and an interconnect is formed partially upon the active region and partially upon the isolation region. A low dose ion implant is then provided into the active region not covered by the gate or the interconnect. A pair of insulator spacers are then formed at opposite edges of the gate. A source/drain electrode is then formed within the active region between the gate electrode and the interconnect, and a second source/drain electrode is formed within the active region between the isolation region and the gate. Finally, a metal silicide layer is formed bridging adjoining surfaces of the interconnect and the first source/drain electrode. In a second embodiment, the source/drain electrodes are formed after the metal silicide layer.