| 摘要 |
<p>PURPOSE: To provide an active matrix type display device which suppresses the leakage current in an off state of TFTs and has a large opening rate and high performance. CONSTITUTION: The surface of an insulatable substrate 21 is provided with light shielding films 22 and conductive films which constitute auxiliary capacitor electrodes 23. The surfaces of these light shielding films 22 are provided with TFTs 35. The TFTs 35 are formed with gate electrodes 29 via gate insulating films 28 on a semiconductor layer having active regions 25, source regions 26 and drain regions 27. The auxiliary capacitor electrodes 23 are electrically connected to the drain regions 27 and are held at the same potential as the potential of the display pixel electrodes 32. The conductive films 30 are formed on the auxiliary capacitor electrodes 23 at the time of pattern forming the gate electrodes 29 via the gate insulating films 28 to constitute auxiliary capacitors for charge holding to form only the gate insulating films 28 of dielectric films.</p> |
