| 摘要 |
PURPOSE: To scale down the cell size of a transistor largely by etching a conductive layer and leaving the conductive layer so as to be superposed to a silicon oxide film, in which the film thickness of the lower sections of both ends is increased for a specified area. CONSTITUTION: Each gate electrode of high breakdown-strength transistor sections in polysilicon films 10 is patterned so that both ends are overlapped approximately 1μm to third silicon oxide films 9, and patterned so that the polysilicon films 10 are formed so as to be overlapped approximately 1μm on active regions even in the boundary regions of the active regions from field oxide film edges 14. The gate electrodes are used as the masks of ion implantation for forming high-concentration impurity regions 11. Accordingly, the yield of the high breakdown-strength transistor is improved largely without increasing junction breakdown strength.
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