发明名称 |
STATIC INDUCTION TRANSISTOR LOGIC |
摘要 |
PURPOSE:To obtain SITL of a high degree of integration, by giving a high concentration to N layer of PNP transistor of the injector independently from N<->layer which forms the channel of the driving transistor and decreasing the base width by reducing the expansion of the depletion layer of the base layer. |
申请公布号 |
JPS53108289(A) |
申请公布日期 |
1978.09.20 |
申请号 |
JP19770023200 |
申请日期 |
1977.03.03 |
申请人 |
SEIKO INSTR & ELECTRONICS |
发明人 |
KOJIMA MASAYUKI |
分类号 |
H01L21/8222;H01L27/02;H01L27/06 |
主分类号 |
H01L21/8222 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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