SEMICONDUCTOR DEVICE HAVING A PASSIVATION LAYER

摘要

A semiconductor device comprises at least one semiconductor layer (1-3) of SiC and a layer (6) applied on at least a portion of an edge surface (19) of said SiC-layer so as to passivate this edge surface portion. At least the portion of said passivation layer closest to said edge surface portion of the SiC-layer is made of a first crystalline material, and the passivation layer comprises a portion made of a second material having AlN as only component or as a major component of a crystalline alloy constituting said second material.