MANUFACTURING METHOD OF MINUTE CONTACT HOLE FOR HIGHLY INTEGRATED DEVICE

摘要

forming several semiconductor devices which includes an impurity diffusion region and a gate electrode on the substrate and forming an oxide layer(8); depositing a first barrier layer(4) and a doped oxide layer(5); forming a photoresist pattern(10) for contact mask on the doped oxide layer and forming a groove(20) by etching the doped oxide layer; making the groove to be narrow by forming protrusions on the side wall of the groove by removing the photoresist pattern and applying heat into the doped oxide layer; depositing a second barrier layer(11); etching the revealed first barrier layer, etching the second barrier layer by anisotropic etch process using the oxide layer as etch-stop layer; forming a contact hole(12) by etching the revealed oxide layer and the doped oxide layer anisotropically.