| 摘要 |
This invention relates to a process for producing an electrically controllable matrix of vertically-structured quantum well components from a substrate on which a lower Bragg mirror has been "epitaxiated", which said mirror is made up of one or several alternations of semiconductor thin layers surmounted by an active layer consisting of compound III/V-based quantum well heterostructures, characterized in that: a) the active quantum well layer is encapsulated with a dielectric layer capable of inducing an alloy interdiffusion in the quantum well layer, b) the said dielectric layer (3) is etched in such a way as to create a self-alignment mask (4), c) the substrate covered by the self-alignment mask is treated thermally so as to create modified regions (7) by alloy interdiffusion in the active layer, d) an upper mirror (8), in semiconductor material doped inversely to the lower mirror, is deposited by epitaxial growth in the recesses of the mask with regard to the regions of the non-interdiffused active zone, e) the edges of the upper mirrors in contact with the dielectric layer are metallized.
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